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1. general description the nx3l1g66 is a low-ohmic single-pole single-throw analog switch. it has two input/output terminals (y and z) and an active hi gh enable input pin (e). when e is low, the analog switch is turned off. schmitt trigger action at the enable input (e) ma kes the circuit tolerant to slower input rise and fall times. the nx3l1g66 allows signals with amplitude up to v cc to be transmitted from y to z; or from z to y. its low on resistance (0.5 ? ) and flatness (0.13 ? ) ensures minimal attenuation and distortion of transmitted signals. 2. features and benefits ? wide supply voltage range from 1.4 v to 4.3 v ? very low on resistance (peak): ? 1.6 ? (typical) at v cc =1.4v ? 1.0 ? (typical) at v cc =1.65v ? 0.55 ? (typical) at v cc =2.3v ? 0.50 ? (typical) at v cc =2.7v ? 0.50 ? (typical) at v cc =4.3v ? high noise immunity ? esd protection: ? hbm jesd22-a114f class 3a exceeds 7500 v ? mm jesd22-a115-a exceeds 200 v ? cdm aec-q100-011 revision b exceeds 1000 v ? iec61000-4-2 contact discharge exceeds 4000 v for switch ports ? cmos low-power consumption ? latch-up performance exceeds 100 ma per jesd 78 class ii level a ? direct interface with ttl levels at 3.0 v ? control input accepts volt ages above supply voltage ? high current handling capabilit y (350 ma continuous cu rrent under 3.3 v supply) ? specified from ? 40 ? c to +85 ? c and from ? 40 ? c to +125 ? c 3. applications ? cell phone ? pda ? portable media player nx3l1g66 low-ohmic single-pole si ngle-throw analog switch rev. 7 ? 22 december 2010 product data sheet
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 2 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 4. ordering information 5. marking [1] the pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. functional diagram 7. pinning information 7.1 pinning table 1. ordering information type number package temperature range name description version nx3l1g66gw ? 40 ? cto+125 ? c tssop5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 NX3L1G66GM ? 40 ? c to +125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 ? 1.45 ? 0.5 mm sot886 table 2. marking codes [1] type number marking code nx3l1g66gw dl NX3L1G66GM dl fig 1. logic symbol fig 2. logic diagram 001aag487 e zy 001aah372 e yz fig 3. pin configuration sot353-1 (tssop5) f ig 4. pin configuration sot886 (xson6) nx3l1g66 yv cc z gnd e 001aai590 1 2 3 5 4 nx3l1g66 z 001aah444 y gnd n.c. v cc e transparent top view 2 3 1 5 4 6
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 3 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level. 9. limiting values [1] the minimum input voltage rating may be exceeded if the input current rating is observed. [2] the minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 v. [3] for tssop5 package: above 87.5 ? c the value of p tot derates linearly with 4.0 mw/k. for xson6 package: above 118 ? c the value of p tot derates linearly with 7.8 mw/k. table 3. pin description symbol pin description sot353-1 sot886 y 1 1 independent input or output z 2 2 independent output or input gnd 3 3 ground (0 v) e 4 4 enable input (active high) n.c. - 5 not connected v cc 5 6 supply voltage table 4. function table [1] input e switch loff-state h on-state table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage ? 0.5 +4.6 v v i input voltage enable input e [1] ? 0.5 +4.6 v v sw switch voltage [2] ? 0.5 v cc + 0.5 v i ik input clamping current v i < ? 0.5 v ? 50 - ma i sk switch clamping current v i < ? 0.5 v or v i >v cc + 0.5 v - ? 50 ma i sw switch current v sw > ? 0.5 v or v sw < v cc + 0.5 v; source or sink current - ? 350 ma v sw > ? 0.5 v or v sw < v cc + 0.5 v; pulsed at 1 ms duration, < 10 % duty cycle; peak current - ? 500 ma t stg storage temperature ? 65 +150 ?c p tot total power dissipation t amb = ? 40 ? cto+125 ?c [3] -250mw
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 4 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 10. recommended operating conditions [1] to avoid sinking gnd current from terminal z when switch current flows in terminal y, the voltage drop across the bidirectio nal switch must not exceed 0.4 v. if the switch current flows into terminal z, no gnd current will flow from te rminal y. in this case, there is no limit for the voltage drop across the switch. [2] applies to control signal levels. 11. static characteristics table 6. recommended operating conditions symbol parameter conditions min max unit v cc supply voltage 1.4 4.3 v v i input voltage enable input e 0 4.3 v v sw switch voltage [1] 0v cc v t amb ambient temperature ? 40 +125 ?c ? t/ ? v input transition rise and fall rate v cc = 1.4 v to 4.3 v [2] - 200 ns/v table 7. static characteristics at recommended operating conditions; volt ages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 ?c t amb = ? 40 ? c to +125 ?c unit min typ max min max (85 ?c) max (125 ?c) v ih high-level input voltage v cc = 1.4 v to 1.95 v 0.65v cc - - 0.65v cc --v v cc = 2.3 v to 2.7 v 1.7 - - 1.7 - - v v cc = 2.7 v to 3.6 v 2.0 - - 2.0 - - v v cc = 3.6 v to 4.3 v 0.7v cc - - 0.7v cc --v v il low-level input voltage v cc = 1.4 v to 1.95 v - - 0.35v cc - 0.35v cc 0.35v cc v v cc = 2.3 v to 2.7 v - - 0.7 - 0.7 0.7 v v cc = 2.7 v to 3.6 v - - 0.8 - 0.8 0.8 v v cc = 3.6 v to 4.3 v - - 0.3v cc -0.3v cc 0.3v cc v i i input leakage current enable input e; v i =gndto4.3v; v cc = 1.4 v to 4.3 v --- - ? 0.5 ? 1 ? a i s(off) off-state leakage current y port; see figure 5 v cc = 1.4 v to 3.6 v - - ? 5- ? 50 ? 500 na v cc = 3.6 v to 4.3 v - - ? 10 - ? 50 ? 500 na i s(on) on-state leakage current z port; see figure 6 v cc = 1.4 v to 3.6 v - - ? 5- ? 50 ? 500 na v cc = 3.6 v to 4.3 v - - ? 10 - ? 50 ? 500 na i cc supply current v i =v cc or gnd; v sw =gndorv cc v cc = 3.6 v - - 100 - 690 6000 na v cc = 4.3 v - - 150 - 800 7000 na
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 5 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 11.1 test circuits 11.2 on resistance c i input capacitance -1.0----pf c s(off) off-state capacitance -35----pf c s(on) on-state capacitance -110----pf table 7. static characteristics ?continued at recommended operating conditions; volt ages are referenced to gnd (ground 0 v). symbol parameter conditions t amb = 25 ?c t amb = ? 40 ? c to +125 ?c unit min typ max min max (85 ?c) max (125 ?c) v i =0.3vorv cc ? 0.3 v; v o =v cc ? 0.3 v or 0.3 v. v i =0.3vorv cc ? 0.3 v; v o = open circuit. fig 5. test circuit for measuring off-state leakage current fig 6. test circuit for measuring on-state leakage current 001aag488 i s v i v il v o v cc gnd ny nz ne 001aag489 i s v i v ih v o v cc gnd ny nz ne table 8. on resistance at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 14 . symbol parameter conditions t amb = ? 40 ? c to +85 ?c t amb = ? 40 ? c to +125 ? c unit min typ [1] max min max r on(peak) on resistance (peak) v i =gndtov cc ; i sw = 100 ma; see figure 7 v cc = 1.4 v - 1.6 3.7 - 4.1 ? v cc = 1.65 v - 1.0 1.6 - 1.7 ? v cc = 2.3 v - 0.55 0.8 - 0.9 ? v cc = 2.7 v - 0.5 0.75 - 0.9 ? v cc = 4.3 v - 0.5 0.75 - 0.9 ?
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 6 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch [1] typical values are measured at t amb = 25 ? c. [2] flatness is defined as the difference between the maximum and minimum value of on resistance measured at identical v cc and temperature. 11.3 on resistance t est circuit and graphs r on(flat) on resistance (flatness) v i =gndtov cc ; i sw =100ma [2] v cc = 1.4 v - 1.0 3.3 - 3.6 ? v cc = 1.65 v - 0.5 1.2 - 1.3 ? v cc = 2.3 v - 0.15 0.3 - 0.35 ? v cc = 2.7 v - 0.13 0.3 - 0.35 ? v cc = 4.3 v - 0.2 0.4 - 0.45 ? table 8. on resistance ?continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for graphs see figure 8 to figure 14 . symbol parameter conditions t amb = ? 40 ? c to +85 ?c t amb = ? 40 ? c to +125 ? c unit min typ [1] max min max r on =v sw / i sw .( 1 ) v cc =1.5v. (2) v cc =1.8v. (3) v cc =2.5v. (4) v cc =2.7v. (5) v cc =3.3v. (6) v cc =4.3v. measured at t amb =25 ? c. fig 7. test circuit for measuring on resistance fig 8. typical on resistance as a function of input voltage 001aah375 v i v ih v cc gnd y z e v sw i sw v i (v) 05 4 3 12 001aag564 0.8 0.4 1.2 1.6 r on () 0 (1) (2) (5) (6) (4) (3)
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 7 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. fig 9. on resistance as a function of input voltage; v cc =1.5v fig 10. on resistance as a function of input voltage; v cc =1.8v 001aag565 v i (v) 03 2 1 0.8 0.4 1.2 1.6 r on () 0 (1) (2) (3) (4) 001aag566 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on () 0 (1) (2) (3) (4) (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. fig 11. on resistance as a function of input voltage; v cc =2.5v fig 12. on resistance as a function of input voltage; v cc =2.7v 001aag567 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on () 0 (1) (2) (3) (4) 001aag568 v i (v) 03 2 1 0.4 0.6 0.2 0.8 1.0 r on () 0 (1) (2) (3) (4)
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 8 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 12. dynamic characteristics [1] typical values are measured at t amb =25 ? c and v cc = 1.5 v, 1.8 v, 2.5 v, 3.3 v and 4.3 v respectively. (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. (1) t amb = 125 ? c. (2) t amb =85 ? c. (3) t amb =25 ? c. (4) t amb = ?40 ? c. fig 13. on resistance as a function of input voltage; v cc =3.3v fig 14. on resistance as a function of input voltage; v cc =4.3v v i (v) 04 3 12 001aag569 0.4 0.6 0.2 0.8 1.0 r on () 0 (1) (2) (3) (4) v i (v) 05 4 23 1 001aaj896 0.4 0.6 0.2 0.8 1.0 r on () 0 (1) (2) (3) (4) table 9. dynamic characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v); for load circuit see figure 16 . symbol parameter conditions t amb = 25 ?c t amb = ? 40 ? c to +125 ?c unit min typ [1] max min max (85 ?c) max (125 ?c) t en enable time e to z or y; see figure 15 v cc = 1.4 v to 1.6 v - 27 41 - 43 48 ns v cc = 1.65 v to 1.95 v - 22 33 - 34 36 ns v cc = 2.3 v to 2.7 v - 17 26 - 27 30 ns v cc = 2.7 v to 3.6 v - 14 23 - 24 26 ns v cc = 3.6 v to 4.3 v - 14 23 - 24 26 ns t dis disable time e to z or y; see figure 15 v cc = 1.4 v to 1.6 v - 9 18 - 19 21 ns v cc = 1.65 v to 1.95 v - 7 13 - 15 16 ns v cc = 2.3 v to 2.7 v - 4 8 - 9 10 ns v cc = 2.7 v to 3.6 v - 4 8 - 8 9 ns v cc = 3.6 v to 4.3 v - 4 8 - 8 9 ns
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 9 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 12.1 waveform and test circuits measurement points are given in table 10 . logic level: v oh is the typical output voltage that occurs with the output load. fig 15. enable and disable times 001aah875 y output off to high high to off e input v i v oh gnd gnd v m t en t dis v x v x switch enabled switch disabled switch disabled table 10. measurement points supply voltage input output v cc v m v x 1.4 v to 4.3 v 0.5v cc 0.9v oh test data is given in table 11 . definitions test circuit: r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 16. load circuit for switching times 001aah377 e y/z z/y r l c l v cc v ext = 1.5 v v i v v o g table 11. test data supply voltage input load v cc v i t r , t f c l r l 1.4 v to 4.3 v v cc ? 2.5ns 35pf 50 ?
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 10 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 12.2 additional dynami c characteristics [1] f i is biased at 0.5v cc . table 12. additional dynamic characteristics at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); v i = gnd or v cc (unless otherwise specified); t r = t f ? 2.5 ns. symbol parameter conditions t amb = 25 ?c unit min typ max thd total harmonic distortion f i =20hzto20 khz; r l =32 ? ; see figure 17 [1] v cc =1.4v; v i = 1 v (p-p) - 0.15 - % v cc =1.65v; v i = 1.2 v (p-p) - 0.10 - % v cc =2.3v; v i = 1.5 v (p-p) - 0.02 - % v cc =2.7v; v i = 2 v (p-p) - 0.02 - % v cc =4.3v; v i = 2 v (p-p) - 0.02 - % f ( ? 3db) ? 3 db frequency response r l =50 ? ; see figure 18 [1] v cc = 1.4 v to 4.3 v - 60 - mhz ? iso isolation (off-state) f i = 100 khz; r l =50 ? ; see figure 19 [1] v cc = 1.4 v to 4.3 v - ? 90 - db v ct crosstalk voltage between digital inputs and switch; f i = 1 mhz; c l = 50 pf; r l =50 ? ; see figure 20 v cc = 1.4 v to 3.6 v - 0.2 - v v cc = 3.6 v to 4.3 v - 0.2 - v q inj charge injection f i = 1 mhz; c l = 0.1 nf; r l =1 m ? ; v gen =0v; r gen =0 ? ; see figure 21 v cc = 1.5 v - 3 - pc v cc = 1.8 v - 3 - pc v cc =2.5v - 3 - pc v cc =3.3v - 3 - pc v cc =4.3v - 6 - pc
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 11 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 12.3 test circuits fig 17. test circuit for measuri ng total harmonic distortion 001aah378 v ih v cc 0.5v cc z/y y/z e f i r l d adjust f i voltage to obtain 0 dbm level at output. increase f i frequency until db meter reads ? 3db. fig 18. test circuit for measuring the frequency response when channel is in on-state 001aah379 v ih v cc 0.5v cc z/y y/z e f i r l db adjust f i voltage to obtain 0 dbm level at input. fig 19. test circuit for measuring isolation (off-state) 001aah380 v il v cc 0.5v cc z/y y/z e f i r l 0.5v cc r l db
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 12 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch a. test circuit b. input and output pulse definitions fig 20. test circuit for measuring crosstalk voltage between digital inputs and switch 001aah383 e y/z z/y r l c l v cc v i v v o g 0.5v cc r l 0.5v cc v ct 001aah381 off logic input (e) v o on off
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 13 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch a. test circuit b. input and output pulse definitions definition: q inj = ? v o ? c l . ? v o = output voltage variation. r gen = generator resistance. v gen = generator voltage. fig 21. test circuit for measuring charge injection 001aah385 e y/z z/y gnd r l c l v cc v gen r gen v i v v o g 001aah384 v o off on off logic input (e) v o
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 14 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 13. package outline fig 22. package outline sot353-1 (tssop5) unit a 1 a max. a 2 a 3 b p lh e l p wy v ce d (1) e (1) z (1) references outline version european projection issue date iec jedec jeita mm 0.1 0 1.0 0.8 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 e 1 1.3 2.25 2.0 0.60 0.15 7 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.46 0.21 sot353-1 mo-203 sc-88a 00-09-01 03-02-19 w m b p d z e e 1 0.15 13 5 4 tssop5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm sot353-1 1.1
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 15 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch fig 23. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot886 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.50.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 16 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 14. abbreviations 15. revision history table 13. abbreviations acronym description cdm charged-device model cmos complementary metal-oxide semiconductor esd electrostatic discharge hbm human body model mm machine model pda personal digital assistant ttl transistor-transistor logic table 14. revision history document id release date data sheet status change notice supersedes nx3l1g66 v.7 20101222 product data sheet - nx3l1g66 v.6 modifications: ? section 2 : iec61000-4-2 added. nx3l1g66 v.6 20090818 product data sheet - nx3l1g66 v.5 nx3l1g66 v.5 20090403 product data sheet - nx3l1g66 v.4 nx3l1g66 v.4 20090317 product data sheet - nx3l1g66 v.3 nx3l1g66 v.3 20080724 product data sheet - nx3l1g66 v.2 nx3l1g66 v.2 20080307 product data sheet - nx3l1g66 v.1 nx3l1g66 v.1 20080103 product data sheet - -
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 17 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 16.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 16.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
nx3l1g66 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 7 ? 22 december 2010 18 of 19 nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from national authorities. 16.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors nx3l1g66 low-ohmic single-pole si ngle-throw analog switch ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 22 december 2010 document identifier: nx3l1g66 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 functional description . . . . . . . . . . . . . . . . . . . 3 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 10 recommended operating conditions. . . . . . . . 4 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11.1 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.2 on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.3 on resistance test circuit and graphs. . . . . . . . 6 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12.1 waveform and test circuits . . . . . . . . . . . . . . . . 9 12.2 additional dynamic characteristics . . . . . . . . . 10 12.3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 16.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 16.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 17 contact information. . . . . . . . . . . . . . . . . . . . . 18 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

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